B diffusion in implanted Ni2Si and NiSi layers
نویسندگان
چکیده
منابع مشابه
Diffusion and redistribution of boron in nickel silicides
The diffusion and solubility of B implanted in δ-Ni2Si and NiSi layers is studied by SIMS. It is observed that both diffusion and solubility are higher in δ-Ni2Si than NiSi. The redistribution of B during Ni silicidation is also studied. The SIMS profiles show the presence of concentration step in the middle of the final NiSi layer. This profile shape is explained in light of the results obtain...
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ژورنال
عنوان ژورنال: Applied Physics Letters
سال: 2010
ISSN: 0003-6951,1077-3118
DOI: 10.1063/1.3303988